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Transient Electro-Thermal Modeling on Power Semiconductor Devices (en Inglés)
Tanya Kirilova Gachovska
(Autor)
·
Jerry Hudgins
(Autor)
·
Bin Du
(Autor)
·
Springer
· Tapa Blanda
Transient Electro-Thermal Modeling on Power Semiconductor Devices (en Inglés) - Gachovska, Tanya Kirilova ; Hudgins, Jerry ; Du, Bin
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Reseña del libro "Transient Electro-Thermal Modeling on Power Semiconductor Devices (en Inglés)"
This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
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